DTC124ECA Просмотр технического описания (PDF) - Willas Electronic Corp.

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производитель

DTC124ECA

NPN Digital Transistor

Willas Electronic Corp. 

WILLAS

FM120-M+

DTC124ECA THRU

1.0NAPSNURFDAiCgEiMtaOlUNTTrSaCnHsOiTsTKtoY rBARRIER RECTIFIERS -20V- 200V

FM1200-M

SOD-123+ PACKAGE

Pb Free Produc

Features

Package outline

Features• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

•

Pb-Fre• eLopwapcrkoafilgeesuisrfaacveamiloaubnlteed application in order to

optimize board space.

SOSD-O123TH -23

RoHS•pLroowdupcowt feorrlopsasc, hkiignhgecffoicdieenscuy.ffix ”G”

Haloge• nHifgrheecuprrreondtuccatpafobriliptya, clokwinfgorcwoadrdevsoultfafgixe “dHro”p.

• Epoxy•mHeigehtssuUrgLe 9ca4pVab-0ilitfyla. mmability rating

• Moisur•eGSuaerndsriintigviftoyr Loevevrevlo1ltage protection.

•

• Ultra high-speed switching.

Built-in• bSiialicsorneespisittaoxrsialepnlaanbaler cthhiep,cmonetfaigl usirlaictoionnjuonfcatinonin. verter circuit

withou•t Lceoandn-efrceteinpgaretsxtmeerneat el ninvpiruotnrmeesnistatol rsstandards of

• The biasMIrLe-sSisTtDo-r1s9c5o0n0s/2is2t8of thin-film resistors with complete

isolatio•nRotoHSalplorowduncet fgoar tpiavcekibnigacsoindeg souffftixhe"Gi"nput. They also have the

0.146(3.7)

0.130(3.3).122(3.10)

.106(2.70)

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

advantaHgaeloogef nalfmreeosptrocdoumct pfolreptealcykienglimcoidneatsiunfgfixp"aHr"asitic effects.

• Only thMeeocn/hofaf cnoincdaitilondsanteaed to be set for operation, making

device•

design

Epoxy :

easy

UL94-V0

r

ated

fl

ame

retardant

.080(2.04)

.070(1.78)

0.040(1.0)

0.024(0.6)

• Case : Molded plastic, SOD-123H

Absolute maximum ratings @ 25к

,

• Terminals :Plated terminals, solderable per MIL-STD-750

0.031(0.8) Typ.

0.031(0.8) Typ.

Symbol

MPeathraomde2t0er26

VCC

Supply voltage

Min Typ Max Unit

---

50

---

V

VIN • PInopluatrvitoylta: gInedicated by cathode band -10

---

40

V

IO

IC(MAX)

• MOuotupnut icnugrrPenotsition : Any

---

30

100

---

mA

Dimensions in inches and (millimeters)

Pd • WPoewigerhdt i:sAsipppatriooxnimated 0.011 gram --- 200 --- mW

Tj

Junction temperature

--- 150 ---

ć

Tstg

StorageMteAmXpeIMraUturMe RATINGS AND E-5L5ECT-R-- ICA1L50CHARćACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

.008(0.20)

ElecFtorriccaaplaCcithivaerlaoacdt,edreirsatteiccsur@ren2t b5yк20%

.003(0.08)

Symbol

RPAarTaINmGetSer

MSinYMBOTLypFM120M-MaHxFM13U0-nMiHt FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M

VMI(aofrf)king CIondpeut voltage (VCC=5V, IO=100­A)

0.5

--- 12 --- 13 V 14

15

16

18

10

115 120

VMI(aonx)imum Recurrent Pea(kVRO=e0v.e2rVse, IVOo=l5tamgAe)

---VRRM --- 20 3.0 30 V 40

.05004(0.10)M6A0X.

80

100

150

200

VMOI(aIoxn)im= um OIRnMuptuSptuVctuovrlotraeltgnaetg(eV(I= IO5/IVI )10mA/0.5mA)

----V-- RMS

0.1

---

14

0.3

0.36

21 mVA

28

35

42

56

70

105

140

IMO(aoffx) imum ODCutpBulot cckuinrrgenVto(lVtaC= gCe=50V, VI 0)

---VDC --- 20 0.5 30­A 40

50

60

80

100

150

200

MGaIximum DAvCercaugrereFnot rgwaainrd(VROe=c5tiVfi= e,dIOCu5rmreAn)t

R1

Input resistance

56 IO ---

---

15.4 22 28.6 K¡

1.0 .020(0.50)

.012(0.30)

RP2e/Rak1 ForwaRrdesSisutragnecCeuraretniot 8.3 ms single half

sfuTperimposT(eVrdaO=nons1i0rtaiVoten, dIfOrl=oe5aqdmue(AJnE,cDfy=E1C00mMeHthzo)d)

sine-wave

0.8IFSM

---

1.0

250

Typical Thermal Resistance (Note 2)

RΘJA

1.2

--- MHz

30

Dimensions in inches and (millimeters)

40

Typical Junction Capacitance (Note 1)

Operating Temperature Range

CJ

TJ

-55 to +125

120

-55 to +150

Storage Temperature Range

TSTG

- 65 to +175

Suggested Solder

CHARACTERISTICS *MarkingSY: M2B5OL FM120-MH FM130-MH FM140-MH FM150-MH FMP1a60d-MLHaFyMo18u0t-MH FM1100-MH FM1150-MH FM1200-MH

Maximum Forward Voltage at 1.0A DC

VF

Maximum Average Reverse Current at @T A=25℃

IR

Rated DC Blocking Voltage

@T A=125℃

0.50

0.7.0031

.800 0.5

.035

10

.900

0.85

0.9

0.92

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

.079

2.000

inches

mm

2- Thermal Resistance From Junction to Ambient

.037

.950

.037

.950

2012-06

2012-0

WILLAS ELECTRONIC COR

WILLAS ELECTRONIC CORP.

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