UPC8112T Просмотр технического описания (PDF) - NEC => Renesas Technology

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производитель

UPC8112T

3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER

NEC => Renesas Technology 

3 V SILICON MMIC L-BAND UPC8112T

FREQUENCY DOWN CONVERTER

FEATURES

INTERNAL BLOCK DIAGRAM

• BROADBAND OPERATION:

RF Input: 800 - 2000 MHz

IF Output: 100 - 300 MHz

• INPUT IP3: -7 dBm

• LOW VOLTAGE OPERATION: 2.7~3.3 V

• LOW CURRENT CONSUMPTION: 8.5 mA

• POWER SAVE FUNCTION

• SUPER SMALL T06 PACKAGE

• TAPE AND REEL PACKAGING OPTION AVAILABLE

DESCRIPTION

RF

Input

IF

Output

POWER

SAVE

LO

Input

VCC GND

The UPC8112T is a silicon Monolithic Microwave Integrated

Circuit which is manufactured using the NESAT III process.

The NESAT III process produces transistors with fT approach-

ing 20 GHz. This device consists of a double balance mixer, an

IF amplifier, and a LO buffer amplifier. The device was de-

signed to be used as the first down converter for GPS and

wireless communications such as cellular, PCS, and 900 MHz

cordless phones. Operating on a 3 volt supply, this IC is ideally

suited for hand held portable designs.

NEC's stringent quality assurance and test procedures as-

sure the highest reliability and performance.

ELECTRICAL CHARACTERISTICS (TA = 25 °C, VCC = VPS = 3.0 V, PLOin = -10 dBm, ZL = ZS = 50 Ω unless otherwise specified )

PART NUMBER

PACKAGE OUTLINE

UPC8112T

T06

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

ICC

Circuit Current (no input signal)

mA

4.9

ICC (PS) Circuit Current at Power Save Mode, VCC = 3.0 V, VPS = 0.5 V

µA

8.5

11.7

0.1

fRFin

fIFout

CG

RF Frequency Response

IF Frequency Response1

Conversion Gain

fRFin = 900 MHz, fLOin = 1000 MHz

fRFin = 1.5 GHz, fLOin = 1.6 GHz

fRFin = 1.9 GHz, fLOin = 1.66 GHz

GHz

0.8

1.9

2.0

MHz

100

250

300

dB

11.5

15

17.5

dB

13

dB

9.5

13

15.5

NF

Single Side Band Noise Figure (SSB)

fRFin = 900 MHz, fLOin = 1000 MHz

dB

fRFin = 1.5 GHz, fLOin = 1.6 GHz

dB

fRFin = 1.9 GHz, fLOin = 1.66 GHz

dB

9.0

11

11

11.2

13.2

P1dB

Output Power at 1 dB gain compression, fRFin = 1.9 GHz

fLOin = 1.66 GHz

dBm

-5

PSAT

Saturated Output Power fRFin = 900 MHz, fLOin = 1000 MHz

dBm

-6.5

-2.5

fRFin = 1.9 GHz, fLOin = 1.66 GHz

dBm

-7

-3

(PRFin = -10 dBm)

IIP3

Input 3rd Order Intercept Point,

fRFIN = 900 MHz, fLOIN = 1000 MHz

dBm

-10

fRFin = 1.5 GHz, fLOin = 1.6 GHz

dBm

-9

fRFin = 1.9 GHz, fLOin = 1.66 GHz

dBm

-7

LORF

LO Leakage at RF pin, fRFin = 900 MHz, fLOin = 1000 MHz

dBm

-45

fRFin = 1.5 GHz, fLOin = 1.6 GHz

dBm

-46

fRFin = 1.9 GHz, fLOin = 1.66 GHz

dBm

-45

LOIF

LO Leakage at IF pin, fRFin = 900 MHz, fLOin = 1000 MHz

dBm

-32

fRFin = 1.5 GHz, fLOin = 1.6 GHz

dBm

-33

fRFin = 1.9 GHz, fLOin = 1.66 GHz

dBm

-30

RFLO

RF Leakage at LO Pin fRFin = 900 MHz, fLOin = 1000 MHz2

dBm

-80

fRFin = 1.5 GHz, fLOin = 1.6 GHz2

dBm

-57

fRFin = 1.9 GHz, fLOin = 1.66 GHz2

dBm

-55

Notes:

1. External matching required.

2. PRFin = -30 dBm

California Eastern Laboratories

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