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DS12C887 Просмотр технического описания (PDF) - Dallas Semiconductor -> Maxim Integrated

Номер в каталоге
Компоненты Описание
производитель
DS12C887
Dallas
Dallas Semiconductor -> Maxim Integrated Dallas
DS12C887 Datasheet PDF : 19 Pages
First Prev 11 12 13 14 15 16 17 18 19
POWER DOWN / POWER UP TIMING
PARAMETER
CS at VIH before Power-
Down
VCC slew from 4.5V to 0V
( CS at VIH)
VCC slew from 0V to 4.5V
( CS at VIH)
CS at VIH after Power-Up
Expected Data Retention
SYMBOL
tPD
tF
4.0 VCC 4.5V
tR
tREC
tDR
MIN
300
100
20
10
TYP
DS12C887
MAX UNITS NOTES
0
µs
µs
µs
200
ms
years 10,11
PARAMETER
Expected Data Retention
SYMBOL
tDR
MIN
10
TYP
MAX
(tA=25°C)
UNITS NOTES
years 10,11
Note:
The real time clock will keep time to an accuracy of ±1 minute per month during data retention time for
the period of tDR.
Warning:
Under no circumstances are negative undershoots, of any amplitude, allowed when device is in battery
back-up mode.
18 of 19

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