CFK2162-P1-000T Просмотр технического описания (PDF) - Mimix Broadband
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производитель
CFK2162-P1-000T Datasheet PDF : 5 Pages
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0.8-1.0 GHz
+34 dBm Power GaAs FET
November 2007 - Rev 15-Nov-07
CFK2162-P1
Features
High Gain
+34 dBm Power Output
Proprietary Power FET Process
>45% Linear Power Added Efficiency
+29 dBm with 30 dBc Third Order Products
Surface Mount SO-8 Power Package
Package Diagram
Description
The CFK2162-P1 is a high-gain FET intended for driver amplifier
applications in high-power systems, and output stage usage in
medium power applications at power levels up to +34 dBm. The
device is easily matched and provides excellent linearity at 2
Watts. Manufactured in Mimix’s power FET process, this device
is assembled in an industry standard surface mount SO-8 power
package that is compatible with high volume, automated
board assembly techniques.
Applications
ISM Band Base Stations and Terminals
Cellular Base Stations and Terminals
Wireless Local Loop
Specifications (TA = 25 ºC)
The following specifications are guaranteed at room temperature in
Mimix test fixtures at 850 MHz.
Absolute Maximum Ratings
Package Physical Dimensions
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 5
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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