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BYW29-200 Просмотр технического описания (PDF) - TY Semiconductor

Номер в каталоге
Компоненты Описание
производитель
BYW29-200
Twtysemi
TY Semiconductor Twtysemi
BYW29-200 Datasheet PDF : 1 Pages
1
Features
Epoxy Meets UL 94 V-0 @ 0.125 in
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Product specification
BYW29-200
3
Maximum RatingsAnd Electrical Characteristics @TA=25 unless otherwise specified
Parameter
Peak repetitive peak reverse voltage
Average Rectified Output Current
Symbol
Rating
Unit
VRRM
200
V
IO
8.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-
wave superimposed on rated load (JEDEC Method)
IFSM
100
A
Forward Voltage
*
Forward Voltage TJ = 150
@IF = 5A
@IF = 20A
0.85
VF
V
1.3
Reverse leakage current * Rated Dc Voltage, TJ = 100
Rated Dc Voltage, TJ = 25
600
IRM
A
5.0
Maximum Reverse Recovery Time IF = 1.0 A, di/dt = 50 A/ s
35
ns
trr
IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A
25
ns
Operating junction and storage temperatures
Tj.Tstg
-65 to 175
Thermal resistance,junction to case per leg
RthJC
3
/W
* Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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