BYM11-100 Просмотр технического описания (PDF) - Vishay Semiconductors
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BYM11-100 Datasheet PDF : 5 Pages
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BYM11-50 thru BYM11-1000, RGL41A thru RGL41M
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.25
Resistive or
Inductive Load
1.00
0.75
0.50
0.25
0
25
50
75
100
125
150
175
Terminal Temperature (°C)
Fig. 1 - Forward Current Derating Curve
10
1
TJ = 100 °C
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
30
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
25
20
15
10
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
10
100
1
10
TJ = 25 °C
Pulse Width = 300 µs
0.1
1 % Duty Cycle
1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
0.01
Mounted on 0.20" x 0.27" (5 mm x 7 mm)
Copper Pad Areas
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Document Number: 88547 For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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