BUX80(2012) Просмотр технического описания (PDF) - Comset Semiconductors

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Компоненты Описание

производитель

BUX80
(Rev.:2012)

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR

Comset Semiconductors 

NPN BUX80

HIGH CURRENT, HIGH SPEED, HIGH

POWER TRANSISTOR

The BUX80 is silicon multiepitaxial planar NPN transistor in Jedec TO-3.

They are intended for use in converters, inverters, switching regulators and motor control

systems applications.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

VCEO

VCER

VEBO

VCES

IC

ICM

IB

Pt

TJ

TStg

Collector-Emitter Voltage

Collector- Emitter Voltage

Emitter-Base Voltage

Collector-Emitter Voltage

Collector Current

Collector Peak Current

Base Current

Total Power Dissipation

Junction Temperature

Storage Temperature

IB = 0

RBE = 50Ω

IC = 0

VBE = 0

tp = 10ms

@ TC = 40°

Value

400

500

10

800

10

15

5

100

150

-65 to +150

Unit

V

V

V

V

A

A

A

Watts

°C

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJC

Thermal Resistance, Junction to Case

Value

1.1

Unit

°C/W

COMSET SEMICONDUCTORS

1/3

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