BFT92 Просмотр технического описания (PDF) - Siemens AG

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BFT92

PNP Silicon RF Transistor

Siemens AG 

BFT 92

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

V(BR)CEO

V

IC = 1 mA, IB = 0

15

-

-

Collector-base cutoff current

ICBO

nA

VCB = 10 V, IE = 0

-

-

100

Emitter-base cutoff current

IEBO

µA

VEB = 2 V, IC = 0

-

-

10

DC current gain

hFE

-

IC = 15 mA, VCE = 8 V

15

50

-

Semiconductor Group

2

Dec-13-1996

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