BFS20 Просмотр технического описания (PDF) - Philips Electronics
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BFS20 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium frequency transistor
Product specification
BFS20
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VBE
base-emitter voltage
Cc
collector capacitance
Cre
feedback capacitance
fT
transition frequency
CONDITIONS
IE = 0; VCB = 20 V
IE = 0; VCB = 20 V; Tj = 100 °C
IC = 0; VEB = 4 V
IC = 7 mA; VCE = 10 V
IC = 7 mA; VCE = 10 V
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 0; VCB = 10 V; f = 1 MHz
IC = 5 mA; VCE = 10 V; f = 100 MHz
MIN.
−
−
−
40
−
−
−
275
TYP.
−
−
−
85
740
1
350
450
MAX.
100
10
100
−
900
−
−
−
UNIT
nA
µA
nA
mV
pF
fF
MHz
1999 Apr 15
3
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