BFS20 Просмотр технического описания (PDF) - NXP Semiconductors.
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BFS20 Datasheet PDF : 6 Pages
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NXP Semiconductors
NPN medium frequency transistor
Product data sheet
BFS20
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
collector-base cut-off current IE = 0; VCB = 20 V
IE = 0; VCB = 20 V; Tj = 100 °C
IEBO
emitter-base cut-off current IC = 0; VEB = 4 V
hFE
DC current gain
IC = 7 mA; VCE = 10 V
VBE
base-emitter voltage
IC = 7 mA; VCE = 10 V
Cc
collector capacitance
IE = Ie = 0; VCB = 10 V; f = 1 MHz
Cre
feedback capacitance
IC = 0; VCB = 10 V; f = 1 MHz
fT
transition frequency
IC = 5 mA; VCE = 10 V; f = 100 MHz
MIN.
−
−
−
40
−
−
−
275
TYP.
−
−
−
85
740
1
350
450
MAX.
100
10
100
−
900
−
−
−
UNIT
nA
µA
nA
mV
pF
fF
MHz
2004 Feb 05
3
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