BFS20 Просмотр технического описания (PDF) - NXP Semiconductors.
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BFS20 Datasheet PDF : 6 Pages
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NXP Semiconductors
NPN medium frequency transistor
Product data sheet
BFS20
FEATURES
• IC(max) = 25 mA
• VCEO(max) = 20 V
• Very low feedback capacitance (typ. 350 fF).
APPLICATIONS
• IF and VHF thick and thin-film circuit applications.
PINNING
PIN
1
2
3
DESCRIPTION
base
emitter
collector
DESCRIPTION
NPN medium frequency transistor in a SOT23 plastic
package.
MARKING
TYPE NUMBER
BFS20
MARKING CODE(1)
G1*
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
BFS20
NAME
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−65
−
−65
MAX.
30
20
4
25
25
250
+150
150
+150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
2004 Feb 05
2
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