BFS20 Просмотр технического описания (PDF) - Diotec Semiconductor Germany

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производитель

BFS20

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

High Frequency Transistors

Characteristics (Tj = 25/C)

DC current gain – Kollektor-Basis-Stromverhältnis 1)

VCE = 10 V, IC = 7 mA

hFE

Base-Emitter voltage – Basis-Emitter-Spannung 1)

VCE = 10 V, IC = 7 mA

Gain-Bandwidth Product – Transitfrequenz

VBEon

VCE = 10 V, IC = 5 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCB0

Feedback Capacitance – Rückwirkungskapazität

VCB = 10 V, IC = ic = 0, f = 1 MHz

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

BFS 20

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

40

85

–

–

740 mV 900 mV

275 MHz 450 MHz

–

–

1 pF

–

–

350 fF

–

RthA

420 K/W 2)

Marking - Stempelung

BFS 20 = G1

1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

5

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