BFR520 Просмотр технического описания (PDF) - Inchange Semiconductor
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BFR520 Datasheet PDF : 7 Pages
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFR520
DESCRIPTION
·High Power Gain
·High Current Gain Bandwidth Product
·Low Noise Figure
APPLICATIONS
·Designed for RF frontend in wideband applications in the
GHz range,such as analog and digital cellular telephones,
cordless.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCES Collector-Emitter Voltage
15
V
VEBO Emitter-Base Voltage
2.5
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
70
mA
0.3
W
175
℃
-65~150
℃
isc Website：www.iscsemi.cn
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