BFG67 Просмотр технического описания (PDF) - NXP Semiconductors.
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BFG67 Datasheet PDF : 14 Pages
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NXP Semiconductors
NPN 8 GHz wideband transistors
Product specification
BFG67; BFG67/X; BFG67/XR
handboo1k,2h0alfpage
h FE
80
MBB301
40
0
0
20
40
60
I C (mA)
VCE = 5 V.
Fig.4 DC current gain as a function of collector
current.
handbook0, .h8alfpage
Cre
(pF)
0.6
0.4
MBB302
0.2
0
0
4
8
12
16
VCB (V)
IC = ic = 0; f = 1 MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage.
10
handbook, halfpage
fT
(GHz)
8
MBB303
6
4
2
0
0
10
20
30
40
IC (mA)
VCE = 8 V; Tamb = 25 °; f = 2 GHz.
Fig.6 Transition frequency as a function of
collector current.
handbook,2h5alfpage
gain
(dB)
20
15
10
MSG
G UM
MBB304
G max
5
0
0
10
20
30 IC (mA) 40
VCE = 8 V; f = 1 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
Fig.7 Gain as a function of collector current.
Rev. 05 - 23 November 2007
5 of 14
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