BDX53 Просмотр технического описания (PDF) - Inchange Semiconductor
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производитель
BDX53 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BDX53/A/B/C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDX53
45
BDX53A
60
VCEO(SUS)
Collector-emitter
sustaining voltage
IC=0.1A, IB=0
V
BDX53B
80
BDX53C
100
VCEsat Collector-emitter saturation voltage IC=3A ,IB=12mA
2.0
V
VBE sat Base-emitter saturation voltage
IC=3A ,IB=12mA
2.5
V
BDX53 VCB=45V, IE=0
BDX53A VCB=60V, IE=0
ICBO
Collector cut-off current
BDX53B VCB=80V, IE=0
0.2
mA
BDX53C VCB=100V, IE=0
固I电NC半H导A体NGE SEMICONDUCTOR BDX53 VCE=22V, IB=0
BDX53A VCE=30V, IB=0
ICEO
Collector cut-off current
BDX53B VCE=40V, IB=0
BDX53C VCE=50V, IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.5
mA
2.0
mA
hFE
DC current gain
IC=3A ; VCE=3V
750
VF-1
Forward diode voltage
IF=3A
1.8
2.5
V
VF-2
Forward diode voltage
IF=8A
2.5
V
2
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