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BCR8PM-12LG Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталоге
Компоненты Описание
производитель
BCR8PM-12LG
Renesas
Renesas Electronics Renesas
BCR8PM-12LG Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BCR8PM-12LG
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
8
80
26
5
0.5
10
2
–40 to +150
–40 to +150
2.0
2000
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 107°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1 T2 G terminal to case
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current
IDRM
2.0
mA Tj = 150°C, VDRM applied
On-state voltage
VTM
1.6
V
Tc = 25°C, ITM = 12 A,
instantaneous measurement
Gate trigger voltageNote2
Ι
VFGTΙ
1.5
V
Tj = 25°C, VD = 6 V, RL = 6 ,
ΙΙ
VRGTΙ
1.5
V
RG = 330
ΙΙΙ
VRGTΙΙΙ
1.5
V
Gate trigger curentNote2
Ι
IFGTΙ
30
mA Tj = 25°C, VD = 6 V, RL = 6 ,
ΙΙ
IRGTΙ
30
mA RG = 330
ΙΙΙ
IRGTΙΙΙ
30
mA
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltageNote4
VGD
0.2/0.1
Rth (j-c)
(dv/dt)c 10/1
V
Tj = 125°C/150°C, VD = 1/2 VDRM
4.3
°C/W Junction to caseNote3
V/µs Tj = 125°C/150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (j-c) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –4.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
Rev.1.00 Feb 14, 2007 page 2 of 7

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