BCR08AS-12 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталоге

Компоненты Описание

производитель

BCR08AS-12

Triac Low Power Use

Renesas Electronics 

BCR08AS-12

Electrical Characteristics

Parameter

Symbol Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak off-state current

IDRM

—

—

2.0

mA Tj = 125°C, VDRM applied

On-state voltage

VTM

—

—

2.0

V

Tc = 25°C, ITM = 1.2 A,

Instantaneous measurement

Gate trigger voltageNote2

Ι

VFGTΙ

—

—

2.0

V

Tj = 25°C, VD = 6 V, RL = 6 Ω,

ΙΙ

VRGTΙ

—

—

2.0

V

RG = 330 Ω

ΙΙΙ

VRGTΙΙΙ

—

—

2.0

V

ΙV

VFGTΙΙΙ

—

—

2.0

V

Gate trigger currentNote2

Ι

IFGTΙ

—

—

5

mA Tj = 25°C, VD = 6 V, RL = 6 Ω,

ΙΙ

IRGTΙ

—

—

5

mA RG = 330 Ω

ΙΙΙ

IRGTΙΙΙ

—

—

5

mA

ΙV

IFGTΙΙΙ

—

—

10

mA

Gate non-trigger voltage

Thermal resistance

VGD

0.1

—

—

V

Tj = 125°C, VD = 1/2 VDRM

Rth (j-a)

—

—

65

°C/W Junction to ambientNote3

Critical-rate of rise of off-state

(dv/dt)c

0.5

—

—

V/µs Tj = 125°C

commutating voltageNote4

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. Soldering with ceramic plate (25 mm × 25 mm × t0.7 mm).

4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Test conditions

1. Junction temperature

Tj = 125°C

2. Rate of decay of on-state commutating current

(di/dt)c = – 0.4 A/ms

3. Peak off-state voltage

VD = 400 V

Commutating voltage and current waveforms

(inductive load)

Supply Voltage

Time

Main Current

Main Voltage

(dv/dt)c

(di/dt)c

Time

Time

VD

REJ03G0292-0200 Rev.2.00 Mar 22, 2007

Page 2 of 7

Share Link: