BC141 Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
BC141 Datasheet PDF : 5 Pages
| |||
BC141
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-Case
Rthj- amb Thermal Resistance Junction-Ambient
Max
35
Max
200
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICES Collect or Cut-off
Current (VBE = 0)
V( BR)CBO ∗ Collect or-Base
Breakdown Voltage
(IE = 0)
V( BR)CEO ∗ Collect or-Emitter
Breakdown Voltage
(IB = 0)
V(BR)EBO ∗ Emitt er-Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
VCE = 60 V
VCE = 60 V
IC = 100 µA
Tamb = 150 oC
IC = 30 mA
IE = 100 µA
IC = 100 mA
IC = 500 mA
IC = 1 A
IB = 10 mA
IB = 50 mA
IB = 100 mA
V BE(o n )∗
hFE∗
Base-Emitter O n
Voltage
DC Current G ain
IC = 1 A
VCE = 1 V
IC = 100 µA VCE = 1 V
for BC141
for BC141 Gr. 6
for BC141 Gr. 10
for BC141 Gr. 16
IC = 100 mA VCE = 1 V
for BC141
for BC141 Gr. 6
for BC141 Gr. 10
for BC141 Gr. 16
IC = 1 A
VCE = 1 V
for BC141
for BC141 Gr. 6
for BC141 Gr. 10
for BC141 Gr. 16
fT
Transit ion F requency IC = 50 mA VCE = 10 V
CCBO
ton
Collector Base
Capacitance
Turn-on T ime
IE = 0 VCB = 5 V f = 1MHz
IC = 100 mA
IB1 = 5 mA
toff
Turn-off T ime
IC = 100 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
IB1 = IB2 = 5 mA
Min. Typ.
100
60
7
0.1
0.35
0.6
1.25
75
28
40
90
40
140
40
63
63
100
100 160
26
15
20
30
50
12
M a x.
100
100
1
1.8
250
100
160
250
25
250
850
Unit
nA
µA
V
V
V
V
V
V
V
MHz
pF
ns
ns
2/5
Share Link: 