BAY80(1999) Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

BAY80
(Rev.:1999)

Silicon Epitaxial Planar Diode

Vishay Semiconductors 

1000

100

Tj = 25°C

10

1

0.1

94 9089

1

10

100

IF – Forward Current ( mA )

Figure 3. Differential Forward Resistance vs.

Forward Current

Dimensions in mm

technical drawings

according to DIN

specifications

94 9366

∅ 1.7 max.

Standard Glass Case

54 A 2 DIN 41880

JEDEC DO 35

Weight max. 0.3 g

26 min.

BAY80

Vishay Telefunken

Cathode Identification

∅ 0.55 max.

3.9 max.

26 min.

Document Number 85553

Rev. 2, 01-Apr-99

www.vishay.de • FaxBack +1-408-970-5600

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