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ADP3110AKRZ-RL Просмотр технического описания (PDF) - ON Semiconductor

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ADP3110AKRZ-RL Datasheet PDF : 8 Pages
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ADP3110A
ELECTRICAL CHARACTERISTICS (Note 4) (VCC = 12 V, TA = 0°C to +85°C, TJ = 0°C to +125°C unless otherwise noted.)
Characteristic
Symbol
Condition
Min
Typ
Max Unit
Supply
Supply Voltage Range
Supply Current
OD Input
VCC
4.6
13.2
V
ISYS
BST = 12 V, IN = 0 V
0.7
5.0
mA
Input Voltage High
VOD_HI
2.0
V
Input Voltage Low
VOD_LO
0.8
V
Hysteresis
400
mV
Input Current
No internal pullup or pulldown resistors 1.0
+1.0
mA
PWM Input
Input Voltage High
VPWM_HI
Input Voltage Low
VPWM_LO
Hysteresis
2.0
V
0.8
V
400
mV
Input Current
No internal pullup or pulldown resistors 1.0
+1.0
mA
HighSide Driver
Output Resistance, Sourcing Current
BST SW = 12 V
2.2
3.4
W
Output Resistance, Sinking Current
BST SW = 12 V
1.0
1.8
W
Output Resistance, Unbiased
BST SW = 0 V
15
kW
Transition Times
trDRVH
tfDRVH
BST SW = 12 V, CLOAD = 3.0 nF
(See Figure 3)
20
55
ns
11
45
Propagation Delay Times (Note 5)
tpdhDRVH
tpdlDRVH
BST SW = 12 V, CLOAD = 3.0 nF
BST SW = 12 V, CLOAD = 3.0 nF
(See Figure 3)
32
45
70
ns
25
35
SW Pulldown Resitance
LowSide Driver
tpdlOD
tpdhOD
(See Figure 2)
(See Figure 2)
SW to PGND
20
35
25
55
15
kW
Output Resistance, Sourcing Current
1.8
3.4
W
Output Resistance, Sinking Current
1.0
1.8
W
Output Resistance, Unbiased
Transition Times
Propagation Delay Times (Note 5)
trDRVL
tfDRVL
tpdhDRVL
tpdlDRVL
VCC = PGND
CLOAD = 3.0 nF, (See Figure 3)
CLOAD = 3.0 nF, (See Figure 3)
(Note 6, tpdhDRVL only)
15
kW
16
50
ns
11
30
12
35
ns
15
40
Timeout Delay
Undervoltage Lockout
tpdlOD
tpdhOD
(See Figure 2)
(See Figure 2)
DRVH SW = 0
20
35
20
35
85
ns
UVLO Startup
3.9
4.3
4.5
V
UVLO Shutdown
3.7
4.1
4.3
V
Hysteresis
0.1
0.2
0.4
V
4. All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC).
5. For propagation delays, “tpdh” refers to the specified signal going high; “tpdl” refers to it going low.
6. Guaranteed by design; not tested in production.
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