2SD669A Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD669A Datasheet PDF : 5 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD669 2SD669A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2SD669
120
V(BR)CEO
Collector-emitter
breakdown voltage
IC=10mA; RBE=∞
V
2SD669A
160
2SD669
180
V(BR)CBO
Collector-base
breakdown voltage
IC=1m A ;IE=0
V
2SD669A
180
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50mA
1.0
V
VBE
Base-emitter on voltage
ICBO
Collector cut-off current
IC=150mA ; VCE=5V
VCB=160V; IE=0
1.5
V
10
μA
2SD669
60
320
hFE-1
DC current gain
IC=150mA ; VCE=5V
固IN电C半H导AN体GE SEMICONDUTOR hFE-2
fT
COB
2SD669A
DC current gain
IC=0.5A ; VCE=5V
Transition frequency
IC=150mA ; VCE=5V
Collector output capacitance
f=1MHz ; VCB=10V
hFE Classifications
60
200
30
140
14
MHz
pF
hFE-1
B
C
D
2SB649 60-120 100-200 160-320
2SB649A 60-120 100-200
2
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