D1816 Просмотр технического описания (PDF) - Unisonic Technologies
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D1816 Datasheet PDF : 4 Pages
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2SD1816
NPN EPITAXIAL PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta =25℃ )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
DC
4
A
PULSE(Note 1)
IC
8
A
Collector Power Dissipation
Junction Temperature
Storage Temperature
1
W
PD
(TC=25°C) 20 (Note 2)
W
TJ
+150
°C
TSTG
-40 ~ +150
°C
Note1: Duty=1/2, Pw=20ms
Note2: When mounted on a 40×40×0.7mm ceramic board
Note3: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Turn-on Time
Storage Time
Fall Time
SYMBOL
BVCBO
BVCEO
BVEBO
VBE(SAT)
VCE(SAT)
ICBO
IEBO
hFE1
hFE2
fT
Cob
tON
tSTG
tF
TEST CONDITIONS
IC =10µA, IE =0
IC =1mA, RB=∞
IE =10µA, IC=0
IC = 2A, IB =0.2A
IC = 2A, IB=0.2A
VCB = 100 V, IE =0
VEB = 4V, IC=0
VCE = 5V, IC = 0.5A
VCE =5V, IC = 3A
VCE =10V, IC =0.5A
VCB =10V, IE =0A, f =1MHz
See test circuit
See test circuit
See test circuit
CLASSIFICATION of hFE1
RANK
RANGE
R
100 - 200
S
140 - 280
T
200 - 400
MIN TYP MAX UNIT
120
V
100
V
6
V
0.9 1.2 V
150 400 mV
1 µA
1 µA
70
400
40
180
MHz
40
pF
100
ns
900
ns
50
ns
Q
70 -140
TEST CIRCUIT
PW=20μS
Duty Cycle≒1%
INPUT
I B1
RB
I B2
50
VR
+
100µ
-5V
OUTPUT
+
470µ
50V
Ic=10, IB1= -10, IB2=2A
Unit (resistance:Ω, capacitance: F)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R209-011,B
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