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Номер в каталоге
Компоненты Описание
NDD04N62ZT4G(2011) Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
производитель
NDD04N62ZT4G
(Rev.:2011)
N-Channel Power MOSFET 620 V, 2.0 Ω
ON Semiconductor
NDD04N62ZT4G Datasheet PDF : 8 Pages
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NDF04N62Z, NDD04N62Z
−
B
−
F
Q
A
123
H
K
PACKAGE DIMENSIONS
TO
−
220FP
CASE 221D
−
03
ISSUE K
−
T
−
SEATING
PLANE
C
S
U
−
Y
−
G
J
N
R
L
D
3 PL
0.25 (0.010)
M
B
M
Y
IPAK
CASE 369D
−
01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
INCHES
DIM MIN MAX
A
0.617 0.635
B
0.392 0.419
C
0.177 0.193
D
0.024 0.039
F
0.116 0.129
G
0.100 BSC
H
0.118 0.135
J
0.018 0.025
K
0.503 0.541
L
0.048 0.058
N
0.200 BSC
Q
0.122 0.138
R
0.099 0.117
S
0.092 0.113
U
0.239 0.271
STYLE 1:
PIN 1.
2.
3.
GATE
DRAIN
SOURCE
MILLIMETERS
MIN MAX
15.67 16.12
9.96 10.63
4.50 4.90
0.60 1.00
2.95 3.28
2.54 BSC
3.00 3.43
0.45 0.63
12.78 13.73
1.23 1.47
5.08 BSC
3.10 3.50
2.51 2.96
2.34 2.87
6.06 6.88
V
S
−
T
−
SEATING
PLANE
B
R
4
A
123
K
C
E
F
G
J
H
D
3 PL
0.13 (0.005)
M
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
Z
DIM MIN MAX MIN MAX
A
0.235 0.245 5.97 6.35
B
0.250 0.265 6.35 6.73
C
0.086 0.094 2.19 2.38
D
0.027 0.035 0.69 0.88
E
0.018 0.023 0.46 0.58
F
0.037 0.045 0.94 1.14
G
0.090 BSC
2.29 BSC
H
0.034 0.040 0.87 1.01
J
0.018 0.023 0.46 0.58
K
0.350 0.380 8.89 9.65
R
0.180 0.215 4.45 5.45
S
0.025 0.040 0.63 1.01
V
0.035 0.050 0.89 1.27
Z
0.155
−−−
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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