NDD04N62Z(2011) Просмотр технического описания (PDF) - ON Semiconductor
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NDD04N62Z Datasheet PDF : 8 Pages
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NDF04N62Z, NDD04N62Z
THERMAL RESISTANCE
Junction−to−Case (Drain)
Parameter
Junction−to−Ambient Steady State
NDF04N62Z
NDD04N62Z
(Note 4) NDF04N62Z
(Note 1) NDD04N62Z
(Note 4) NDD04N62Z−1
Symbol
RqJC
RqJA
Value
4.4
1.5
50
38
80
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
VGS = 0 V, ID = 1 mA
BVDSS
620
Breakdown Voltage Temperature
Reference to 25°C,
DBVDSS/
0.6
Coefficient
ID = 1 mA
DTJ
Drain−to−Source Leakage Current
VDS = 620 V, VGS = 0 V
25°C
125°C
IDSS
V
V/°C
1
mA
50
Gate−to−Source Forward Leakage
ON CHARACTERISTICS (Note 5)
Static Drain−to−Source
On−Resistance
VGS = ±20 V
VGS = 10 V, ID = 2.0 A
IGSS
RDS(on)
±10
mA
1.8
2.0
W
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = VGS, ID = 50 mA
VDS = 15 V, ID = 2.0 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
VDD = 310 V, ID = 4.0 A,
VGS = 10 V
Plateau Voltage
Gate Resistance
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 310 V, ID = 4.0 A,
VGS = 10 V, RG = 5 Ω
Fall Time
VGS(th)
3.0
4.5
V
gFS
3.3
S
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGP
Rg
535
pF
62
14
19
nC
3.9
10
6.4
V
4.7
W
td(on)
12
ns
tr
13
td(off)
25
tf
14
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 4.0 A, VGS = 0 V
VSD
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0 V, VDD = 30 V
trr
IS = 4.0 A, di/dt = 100 A/ms
Qrr
4. Insertion mounted
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
1.6
V
285
ns
1.3
mC
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