CS19-12HO1S-TUBE Просмотр технического описания (PDF) - IXYS CORPORATION
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CS19-12HO1S-TUBE Datasheet PDF : 5 Pages
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CS19-08ho1
Thyristor
60
40
IT
[A]
20
125°C
150°C
TVJ = 25°C
0
0,5 1,0 1,5 2,0 2,5
VT [V]
Fig. 1 Forward characteristics
160
50 Hz, 80% VRRM
140
120
ITSM
100
[A]
80
TVJ = 45°C
TVJ = 125°C
60
0,01
0,1
1
t [s]
Fig. 2 Surge overload current
1000
VR = 0 V
I2t
100
[A2s]
TVJ = 45°C
TVJ = 125°C
10
1
2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I2t versus time (1-10 ms)
100
1: IGD, TVJ = 150°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
10
VG
[V]
1
3
2
1
1000
6
5
4
100
tgd
[µs]
10
typ.
Limit
TVJ = 125°C
40
30
IT(AV)M
20
[A]
10
dc =
1
0.5
0.4
0.33
0.17
0.08
0,1 IGD, TVJ = 125°C
1
10
4: PGAV = 0.5 W
5: PGM = 2.5 W
6: PGM = 5 W
100
1000
1
10
IG [mA]
100
IG [mA]
1000
0
0 25 50 75 100 125 150 175
TC [°C]
Fig. 4 Gate trigger characteristics
Fig. 5 Gate controlled delay time
Fig. 6 Max. forward current
at case temperature
40
30
P(AV)
20
dc =
1
0.5
0.4
0.33
0.17
0.08
[W]
10
RthHA
0.6
0.8
1.0
2.0
4.0
8.0
0
0
10
20
0
50 100 150
IT(AV) [A]
Tamb [°C]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0,8
0,6
ZthJC
0,4
[K/W]
0,2
0,0
100
Rthi [K/W] ti [s]
0.10 0.01
0.08 0.0011
0.18 0.025
0.17 0.32
0.17 0.09
101
102
103
104
t [ms]
Fig. 8 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827c
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