BFR93AW Просмотр технического описания (PDF) - NXP Semiconductors.

Номер в каталоге

Компоненты Описание

производитель

BFR93AW

NPN 5 GHz wideband transistor

NXP Semiconductors. 

NXP Semiconductors

NPN 5 GHz wideband transistor

Product specification

BFR93AW

FEATURES

 High power gain

 Gold metallization ensures

excellent reliability

 SOT323 (S-mini) package.

APPLICATIONS

It is designed for use in RF amplifiers,

mixers and oscillators with signal

frequencies up to 1 GHz.

DESCRIPTION

Silicon NPN transistor encapsulated

in a plastic SOT323 (S-mini) package.

The BFR93AW uses the same crystal

as the SOT23 version, BFR93A.

PINNING

PIN

DESCRIPTION

1 base

2 emitter

3 collector

handbook, 2 columns

3

1

2

Top view

MBC870

Marking code: R2.

Fig.1 SOT323

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

IC

Ptot

hFE

Cre

fT

GUM

F

Tj

collector-base voltage

collector-emitter voltage

collector current (DC)

total power dissipation

DC current gain

feedback capacitance

transition frequency

maximum unilateral power

gain

noise figure

junction temperature

open emitter

open base

up to Ts = 93 C; note 1

IC = 30 mA; VCE = 5 V

IC = 0; VCE = 5 V; f = 1 MHz;

Tamb = 25 C

IC = 30 mA; VCE = 5 V; f = 500 MHz

IC = 30 mA; VCE = 8 V; f = 1 GHz;

Tamb = 25 C

IC = 30 mA; VCE = 8 V; f = 2 GHz;

Tamb = 25 C

IC = 5 mA; VCE = 8 V; f = 1 GHz;

s = opt

Note

1. Ts is the temperature at the soldering point of the collector pin.

MIN.









40



TYP.









90

0.6

MAX.

15

12

35

300





UNIT

V

V

mA

mW

pF

4

5



GHz



13



dB



8



dB



1.5



dB





150 C

1995 Sep 18

2

Share Link: