BC857AMB Просмотр технического описания (PDF) - NXP Semiconductors.
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BC857AMB Datasheet PDF : 14 Pages
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Nexperia
BC857xMB series
45 V, 100 mA PNP general-purpose transistors
1000
hFE
800
600
(1)
400
(2)
200
(3)
mle192
−1200
VBE
(mV)
−1000
−800
−600
−400
mle193
(1)
(2)
(3)
0
−10−2 −10−1
−1
−10
−102
−103
IC (mA)
VCE = 5 V
(1) Tamb = 150 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 7. BC857BMB: DC current gain as a function of
collector current; typical values
−200
−10−2 −10−1
−1
−10
−102
−103
IC (mA)
VCE = 5 V
(1) Tamb = 55 C
(2) Tamb = 25 C
(3) Tamb = 150 C
Fig 8. BC857BMB: Base-emitter voltage as a function
of collector current; typical values
−104
VCEsat
(mV)
−103
mle194
−1200
VBEsat
(mV)
−1000
−800
mle195
(1)
(2)
−102
(1)
(2)
(3)
(3)
−600
−400
−10
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 20
(1) Tamb = 150 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 9.
BC857BMB: Collector-emitter saturation
voltage as a function of collector current;
typical values
−200
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 20
(1) Tamb = 55 C
(2) Tamb = 25 C
(3) Tamb = 150 C
Fig 10. BC857BMB: Base-emitter saturation voltage
as a function of collector current; typical
values
BC857XMB_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 February 2012
© Nexperia B.V. 2017. All rights reserved
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