BAV170 Просмотр технического описания (PDF) - NXP Semiconductors.
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BAV170 Datasheet PDF : 10 Pages
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NXP Semiconductors
Low-leakage double diode
102
handbook, full pagewidth
IFSM
(A)
10
Product data sheet
BAV170
MBG704
1
10−1
1
10
102
103
tp (µs)
104
Based on square wave currents; Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
handboo1k,0h2alfpage
IR
(nA)
10
(1)
MLB754
1
10 1
10 2
(2)
10 3
0
50
VR = 75 V.
(1) Maximum values.
(2) Typical values.
100
150 T j (oC) 200
Fig.5 Reverse current as a function of junction
temperature; per diode.
2003 Mar 25
2
handbook, halfpage
Cd
(pF)
1
MBG526
0
0
5
10
15 VR (V) 20
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; per diode; typical values.
5
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