BAV170 Просмотр технического описания (PDF) - NXP Semiconductors.
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BAV170 Datasheet PDF : 10 Pages
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NXP Semiconductors
Low-leakage double diode
Product data sheet
BAV170
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VRRM
VR
IF
IFRM
IFSM
Ptot
Tstg
Tj
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
single diode loaded; note 1;
see Fig.2
double diode loaded; note 1;
see Fig.2
square wave; Tj = 25 °C prior to
surge; see Fig.4
tp = 1 µs
tp = 1 ms
tp = 1 s
Tamb = 25 °C; note 1
Note
1. Device mounted on a FR4 printed-circuit board.
MIN. MAX. UNIT
−
85
V
−
75
V
−
215 mA
−
125 mA
−
500 mA
−
4
A
−
1
A
−
0.5
A
−
250 mW
−65
+150 °C
−
150 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
trr
reverse recovery time
CONDITIONS
TYP. MAX. UNIT
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
−
900
mV
−
1000 mV
−
1100 mV
−
1250 mV
VR = 75 V
0.003 5
nA
VR = 75 V; Tj = 150 °C
3
80
nA
f = 1 MHz; VR = 0; see Fig.6
2
−
pF
when switched from IF = 10 mA to
0.8
3
µs
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
2003 Mar 25
3
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