2SK3018 Просмотр технического описания (PDF) - ROHM Semiconductor
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2SK3018 Datasheet PDF : 4 Pages
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Transistor
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
−
Drain-source breakdown voltage V(BR)DSS 30
Zero gate voltage drain current IDSS
−
Gate threshold voltage
VGS(th)
0.8
Static drain-source on-state
resistance
RDS(on)
−
RDS(on)
−
Forward transfer admittance
|Yfs |
20
Input capacitance
Ciss
−
Output capacitance
Coss
−
Reverse transfer capacitance
Crss
−
Turn-on delay time
td(on)
−
Rise time
tr
−
Turn-off delay time
td(off)
−
Fall time
tf
−
Typ.
−
−
−
−
5
7
−
13
9
4
15
35
80
80
Max.
±1
−
1
1.5
8
13
−
−
−
−
−
−
−
−
Unit
Conditions
µA VGS = ±20V, VDS = 0V
V ID = 10µA, VGS = 0V
µA VDS = 30V, VGS = 0V
V VDS = 3V, ID = 100µA
Ω ID = 10mA, VGS = 4V
Ω ID = 1mA, VGS = 2.5V
mS VDS = 3V, ID = 10mA
pF VDS = 5V
pF VGS = 0V
pF f = 1MHz
ns ID = 10mA, VDD 5V
ns VGS = 5V
ns RL = 500Ω
ns RG = 10Ω
2SK3018
zElectrical characteristic curves
0.15
4V
3V
Ta=25°C
3.5V
Pulsed
0.1
2.5V
0.05
2V
VGS=1.5V
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical output characteristics
200m
VDS=3V
100m Pulsed
50m
20m
10m
5m
2m
Ta=125°C
1m
75°C
25°C
0.5m
−25°C
0.2m
0.1m
0
1
2
3
4
GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Typical transfer characteristics
2
VDS=3V
ID=0.1mA
Pulsed
1.5
1
0.5
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate threshold voltage vs.
channel temperature
50
20
Ta=125°C
75°C
25°C
10
−25°C
5
VGS=4V
Pulsed
50
Ta=125°C
20
75°C
25°C
−25°C
10
5
VGS=2.5V
Pulsed
2
2
1
1
0.5
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
0.5
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
Fig.4 Static drain-source on-state
Fig.5 Static drain-source on-state
resistance vs. drain current ( Ι )
resistance vs. drain current (ΙΙ)
15
Ta=25°C
Pulsed
10
5
ID=0.1A
ID=0.05A
0
0
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
Rev.B
2/3
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