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2SC3757 Просмотр технического описания (PDF) - Panasonic Corporation

Номер в каталоге
Компоненты Описание
производитель
2SC3757
Panasonic
Panasonic Corporation Panasonic
2SC3757 Datasheet PDF : 3 Pages
1 2 3
Transistors
2SC3757
Silicon NPN epitaxial planar type
For high-speed switching
Unit: mm
Features
Low collector-emitter saturation voltage VCE(sat)
Mini type package, allowing downsizing of the equipment and au-
0.40+–00..0150
3
0.16+–00..0160
tomatic insertion through the tape packing and the magazine
packing
1
2
(0.95) (0.95)
1.9±0.1
/ Absolute Maximum Ratings Ta = 25°C
2.90+–00..0250
10˚
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
40
V
c e. d ty Collector-emitter voltage (E-B short) VCES
40
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
5
V
a e cle con Collector current
IC
100
mA
lifecy , dis Peak collector current
ICP
300
mA
n u duct typed Collector power dissipation
PC
200
mW
te tin Pro ed Junction temperature
Tj
150
°C
ur tinu Storage temperature
Tstg 55 to +150 °C
Marking Symbol: 2Y
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
in n s followlianngefdodiscon Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min
c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0
tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0
M is con inten Forward current transfer ratio *
hFE VCE = 1 V, IC = 10 mA
60
/Dis ma Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
D ance type, Base-emitter saturation voltage
VBE(sat) IC = 10 mA, IB = 1 mA
ten ce Transition frequency
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz
ain nan Collector output capacitance
M inte (Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
ma Turn-on time
(planed Turn-off time
ton Refer to the switching time measurement
toff circuit
Typ Max
0.1
0.1
200
0.17 0.25
1.0
450
2
6
17
17
Unit
µA
µA
V
V
MHz
pF
ns
ns
Storage time
tstg
10
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
60 to 120
90 to 200
Publication date: February 2004
SJC00136CED
1

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