TK20E60W,S1VX Просмотр технического описания (PDF) - Unspecified

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производитель

TK20E60W,S1VX

MOSFETs Silicon N-Channel MOS (TMOSⅣ)

Unspecified 

MOSFETs Silicon N-Channel MOS (DTMOS)

TK20E60W

1. Applications

• Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.)

by used to Super Junction Structure : DTMOS

(2) Easy to control Gate switching

(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA)

3. Packaging and Internal Circuit

TK20E60W

1: Gate

2: Drain (Heatsink)

3: Source

TO-220

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

Single-pulse avalanche energy

Avalanche current

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature

Storage temperature

Mounting torque

(Tc = 25)

(Note 1)

(Note 1)

(Note 2)

(Note 1)

(Note 1)

VDSS

VGSS

ID

IDP

PD

EAS

IAR

IDR

IDRP

Tch

Tstg

TOR

600

±30

20

80

165

200

5

20

80

150

-55 to 150

0.6

V

A

W

mJ

A



Nm

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2012-11

1

2013-12-26

Rev.4.0

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