ZXMN10A07Z(2004) Просмотр технического описания (PDF) - Zetex => Diodes

Номер в каталоге

Компоненты Описание

производитель

ZXMN10A07Z
(Rev.:2004)

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN10A07Z

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain-source voltage

Gate-source voltage

Continuous drain current @ VGS=10V; TA=25°C (b)

@ VGS=10V; TA=70°C (b)

@ VGS=10V; TA=25°C (a)

Pulsed drain current (c)

Continuous source current (body diode) (b)

Pulsed source current (body diode) (c)

Power dissipation at TA =25°C (a)

Linear derating factor

Power dissipation at TA =25°C (b)

Linear derating factor

Operating and storage temperature range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

Tj, Tstg

LIMIT

100

±20

1.4

1.1

1.0

4.2

2.1

4.2

1.5

12

2.6

21

-55 to +150

UNIT

V

V

A

A

A

A

W

mW/°C

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to ambient (a)

Junction to ambient (b)

R⍜JA

R⍜JA

83.3

°C/W

47.4

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

(b) For a device surface mounted on FR4 PCB measured at t Յ 10 sec.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.

Refer to Transient Thermal Impedance graph.

SEMICONDUCTORS

2

ISSUE 6 - MAY 2004

Share Link: