VSKDU300/06PBF Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге

Компоненты Описание

производитель

VSKDU300/06PBF

INT-A-PAK Power Modules Ultrafast Diodes, 300 A

Vishay Semiconductors 

VSKDU300/06PbF

Vishay Semiconductors

INT-A-PAK Power Modules

Ultrafast Diodes, 300 A

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

TJ = 25 °C

-

Reverse recovery time

trr

TJ = 125 °C

-

Peak recovery current

Reverse recovery charge

TJ = 25 °C

Irr

TJ = 125 °C

TJ = 25 °C

Qrr

TJ = 125 °C

IF = 50 A

-

dI/dt = 200 A/μs

-

VR = 400 V (per leg)

-

-

Peak rate of recovery current dI(rec)M/dt TJ = 125 °C

-

Softness factor per leg

IF = 50 A, TJ = 25 °C, dI/dt = 400 A/μs, VR = 200 V

-

s

IF = 50 A, TJ = 125 °C, dI/dt = 400 A/μs, VR = 200 V

-

130

195

11

20

670

1800

-

0.2

0.22

MAX.

165

260

18

30

1485

3900

400

-

-

UNITS

ns

A

nC

A/μs

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction operating and

storage temperature range

Maximum thermal resistance,

junction to case per leg

Typical thermal resistance,

case to heatsink

TJ, TStg

RthJC

DC operation

RthCS Mounting surface, flat, smooth and greased

Mounting

torque ± 10 %

to heatsink

busbar

A mounting compound is recommended and the

torque should be rechecked after a period of 3 hours

to allow the spread of the compound.

Approximate weight

Case style

VALUES

- 40 to 150

0.16

0.05

UNITS

°C

K/W

4 to 6

Nm

200

g

7.1

oz.

INT-A-PAK

www.vishay.com

2

For technical questions within your region, please contact one of the following: Document Number: 94549

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Revision: 19-May-10

Share Link: