VSKH142-14PBF Просмотр технического описания (PDF) - Vishay Semiconductors

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производитель

VSKH142-14PBF

Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAK Power Modules)

Vishay Semiconductors 

VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series

Thyristor/Diode and

Vishay High Power Products

Thyristor/Thyristor, 135 A to 160 A

(New INT-A-PAK Power Modules)

TRIGGERING

PARAMETER

Maximum peak gate power

Maximum average gate power

Maximum peak gate current

Maximum peak negative

gate voltage

Maximum required DC

gate voltage to trigger

Maximum required DC

gate current to trigger

Maximum gate voltage

that will not trigger

Maximum gate current

that will not trigger

Maximum rate of rise of

turned-on current

SYMBOL

PGM

PG(AV)

IGM

- VGT

TEST CONDITIONS

tp ≤ 5 ms, TJ = TJ maximum

f = 50 Hz, TJ = TJ maximum

tp ≤ 5 ms, TJ = TJ maximum

TJ = - 40 °C

VGT

TJ = 25 °C

TJ = TJ maximum

TJ = - 40 °C

IGT

TJ = 25 °C

TJ = TJ maximum

Anode supply = 6 V,

resistive load; Ra = 1 Ω

VGD

TJ = TJ maximum, rated VDRM applied

IGD

dI/dt

TJ = TJ maximum, ITM = 400 A rated VDRM applied

VALUES

12

3

3

10

4

2.5

1.7

270

150

80

0.3

10

300

UNITS

W

A

V

mA

V

mA

A/μs

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction operating

temperature range

TJ

Maximum storage

temperature range

TStg

Maximum thermal resistance,

junction to case per junction

RthJC

DC operation

Maximum thermal resistance,

case to heatsink per module

RthCS Mounting surface, smooth, flat and greased

Mounting

torque ± 10 %

IAP to heatsink

busbar to IAP

Approximate weight

A mounting compound is recommended and the

torque should be rechecked after a period of

3 hours to allow for the spread of the compound.

Lubricated threads.

Case style

VALUES

- 40 to 125

- 40 to 150

UNITS

°C

0.18

0.16

K/W

0.05

4 to 6

Nm

200

g

7.1

oz.

New INT-A-PAK

ΔR CONDUCTION PER JUNCTION

DEVICES

180°

SINUSOIDAL CONDUCTION

AT TJ MAXIMUM

120°

90°

60°

VSK.136

0.007

0.01

0.013 0.0155

30°

0.017

180°

0.009

RECTANGULAR CONDUCTION

AT TJ MAXIMUM

120°

90°

60°

0.012

0.014

0.015

VSK.142

0.0019 0.0019 0.0020 0.0020 0.0021 0.0018 0.0022 0.0023 0.0023

VSK.162

0.0030 0.0031 0.0032 0.0033 0.0034 0.0029 0.0036 0.0039 0.0041

Note

• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

30°

0.017

0.0020

0.0040

UNITS

K/W

Document Number: 94513

Revision: 04-May-10

For technical questions, contact: indmodules@vishay.com

www.vishay.com

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