VSKH142-14PBF Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
VSKH142-14PBF
Vishay Semiconductors
VSKH142-14PBF Datasheet PDF : 13 Pages
| |||
VSK.136..PbF, VSK.142..PbF, VSK.162..PbF Series
Vishay High Power Products
Thyristor/Diode and
Thyristor/Thyristor, 135 A to 160 A
(New INT-A-PAK Power Modules)
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
on-state, non-repetitive
ITSM
surge current
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
I2√t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
VFM
IH
Maximum latching current
IL
TEST CONDITIONS
VSK.136 VSK.142 VSK.162
180° conduction, half sine wave
135
140
160
85
85
85
As AC switch
300
310
355
t = 10 ms No voltage
t = 8.3 ms reapplied
3200
3360
4500
4712
4870
5100
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sine half wave,
initial TJ =
TJ maximum
2700
2800
51.5
47
3785
3963
102
92.5
4100
4300
119
108
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
36.5
71.6
84
33.3
65.4
76.7
t = 0.1 ms to 10 ms, no voltage reapplied
515.5 1013 1190
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum
(I > π x IT(AV)), TJ maximum
0.86
1.05
0.83
1
0.8
0.98
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum 2.02
1.78
1.67
(I > π x IT(AV)), TJ maximum
ITM = π x IT(AV), TJ = 25 °C, 180° conduction
ITM = π x IT(AV), TJ = 25 °C, 180° conduction
Anode supply = 6 V initial IT = 30 A, TJ = 25 °C
Anode supply = 6 V resistive load = 1 Ω
Gate pulse: 10 V, 100 μs, TJ = 25 °C
1.65
1.57
1.57
1.43
1.55
1.55
200
400
1.38
1.54
1.54
UNITS
A
°C
A
kA2s
kA2√s
V
mΩ
V
V
mA
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
SYMBOL
tgd
tgr
tq
TEST CONDITIONS
TJ = 25 °C
Gate current = 1 A, dlg/dt = 1 A/μs
Vd = 0.67 % VDRM
ITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 Ω
VALUES
1
2
50 to 200
UNITS
μs
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of
off-state voltage
SYMBOL
IRRM,
IDRM
VINS
dV/dt
TEST CONDITIONS
TJ = 125 °C
50 Hz, circuit to base,
all terminals shorted, t = 1 s
TJ = TJ maximum,
exponential to 67 % rated VDRM
VALUES
50
3500
1000
UNITS
mA
V
V/μs
www.vishay.com
2
For technical questions, contact: indmodules@vishay.com
Document Number: 94513
Revision: 04-May-10
Share Link: