UT2340G Просмотр технического описания (PDF) - Unisonic Technologies
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UT2340G Datasheet PDF : 7 Pages
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UT2340
TYPICAL CHARACTERISTICS (Cont.)
Gate Threshold Voltage vs.
Junction Temperature
1.1
ID=-0.25mA
Pulsed
1
0.9
0.8
0.7
0.6
25
50 75 100 125 150
Junction Temperature, TJ (°C)
Drain Current vs. Gate-Source
Voltage
12
10
8
6
4
2
TA=25°C
Pulsed
0
0
2
4
6
8
10
Gate-Source Voltage, -VGS (V)
Power Dissipation vs. Junction
Temperature
2
SOT-23
1.5
1
0.5
0
0 25 50 75 100 125 150
Junction Temperature, TJ (°C)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
Source Current vs. Source-Drain
Voltage
10
TA=150°C
25°C
1
0.1
0.5 0.6 0.7 0.8 0.9 1 1.1
Source-Drain Voltage, -VSD (V)
Drain-Source On-Resistance vs.
Drain Current
48
TA=25°C
VGS=-10V
Pulsed
46
44
42
0 1 2 3 4 5 6 7 8 9 10 11 12
Drain Current, -ID (A)
Drain Current vs.
Junction Temperature
6.3
4.2
2.1
0
25 50 75 100 125 150
Junction Temperature, TJ (°C)
6 of 7
QW-R502-162.F
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