UT2340
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 1, 2)
VGSS
ID
IDM
±8
V
-2
A
-10
A
Total Power Dissipation
Junction Temperature
Strong Temperature
PD
TJ
TSTG
0.46
W
+150
°C
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)
Junction to Case
SYMBOL
MIN
TYP
θJA
250
θJC
75
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
MAX
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS =0 V, ID =-250 µA
-20
Drain-Source Leakage Current
IDSS VDS=-16V, VGS =0 V
Gate-Source Leakage Current
IGSS
VGS = ±8 V, VDS = 0 V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=-250μA,Referenced to 25°C
-15
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS =VGS, ID =-250 µA
-0.4 -0.9
VGS =-4.5V, ID =-2A
52
Drain-Source On-State Resistance (Note 2) RDS(ON) VGS =-2.5 V, ID =-1.7A
78
VGS=-1.8V, ID =-1.2A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
600
COSS VDS=-10V, VGS =0V, f=1.0MHz
175
Reverse Transfer Capacitance
CRSS
80
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
tD(ON)
6
Turn-ON Rise Time
Turn-OFF Delay Time
tR
VDD=-5V,ID=-0.5A,VGS =-4.5V,
9
tD(OFF) RGEN =6 Ω
31
Turn-OFF Fall Time
tF
26
Total Gate Charge (Note 2)
Gate-Source Charge
QG
8
QGS VDS=-10V, VGS =-4.5V, ID=-2A
1.3
Gate-Drain Charge
QGD
2.2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage(Note2) VSD VGS =0V, IS = -0.42A (Note )
-0.7
Maximum Continuous Drain-Source Diode
Forward Current
IS
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300μs, duty cycle ≤2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C/W when mounted on min.
MAX UNIT
V
-1 µA
±100 nA
mV/℃
-1.5 V
70 mΩ
110 mΩ
210 mΩ
pF
pF
pF
12 ns
18 ns
50 ns
42 ns
11 nC
nC
nC
-1.2 V
-0.42 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-162.C