UT2304
TYPICAL CHARACTERISTICS
Power MOSFET
Forward Characteristic of Reverse Diode
10.00
1.00
TJ=150℃
0.10
TJ=25℃
0.01
0.1
0.5
0.9
1.3
Source-to-Drain Voltage, VSD (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Gate Threshold Voltage vs. Junction
2.05
Temperature
1.85
1.65
1.45
1.25
-50
0
50
100
150
Junction Temperature, TJ (℃)
3 of 5
QW-R502-150.D