UPD7759C Просмотр технического описания (PDF) - NEC => Renesas Technology
Номер в каталоге
Компоненты Описание
производитель
UPD7759C Datasheet PDF : 18 Pages
| |||
µPD7759
DC CHARACTERISTICS (Ta = –10 to +70 °C, VDD = 2.7 to 5.5 V, fOSC = 640 kHz)
Parameters
Symbol
Conditions
High-level output voltage
VOH
IOH = –100 µA
Low-level output voltage
VOL
VDD = 5 V ± 10 %, IOL = 1.6 mA
Input leak current
| ILI |
I0 to I7, ST, CS, WR, ASD0
to ASD7, MD
Output leak current
| ILO | BUSY, A0 to A8
(Stand alone, slave mode)
VDD = 5 V
Supply current
(Standby mode)
VDD = 5 V
IDD
(Stand alone, slave mode)
2.7 V <= VDD <= 3.5 V
(Standby mode)
2.7 V <= VDD <= 3.5 V
VDD = 2.7 V, RREF = 0 Ω
Reference input current Note
VDD = 5.5 V, RREF = 0 Ω
IREF
VDD = 2.7 V, RREF = 50 kΩ
D/A converter output current
D/A converter output leak current
IAVO
| ILD |
VDD = 5.5 V, RREF = 50 kΩ
2.7 V <= VDD <= 5.5 V
VAVO = 2.0 V, D/A input: 1 FFH
0 V <= VAVO <= VDD
in the standby mode
MIN. TYP. MAX.
VDD –0.5
0.4
Unit
V
V
3
µA
3
µA
10
mA
20
µA
1
mA
10
µA
140
250
440
µA
500
760 1200
µA
21
30
39
µA
68
78
88
µA
32 IREF 34 IREF 36 IREF
µA
5
µA
Note Measuring circuit
VDD
RREF
IREF
REF
AVO
IAVO
7
Share Link: 