µ PA1811
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
120 VGS = −2.5 V
100
80
TA = 125˚C
75˚C
25˚C
60
−25˚C
40
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
VGS = −10 V
40
TA = 125˚C
75˚C
30
25˚C
20
−25˚C
10
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
ID = −2.0 A
150
100
50
0
0
−2
−4
−6
−8
−10
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
VGS = −4.0 V
TA = 125˚C
60
75˚C
25˚C
40
−25˚C
20
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
ID = −2.0 A
80
VGS = −2.5 V
60
−4.0 V
40
−10 V
20
0
−50
10000
0
50
100
150
Tch - Channel Temperature -˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0 V
1000
100
Ciss
Coss
Crss
10
−1
−10
VDS - Drain to Source Voltage - V
−100
4
Data Sheet D11820EJ1V0DS00