µ PA1810
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
VGS = −4.0 V
60
TA = 125˚C
75˚C
40
25˚C
−25˚C
20
−0.01
−0.1
−1
−10
ID - Drain Current - A
−100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
ID = −2.0 A
80
60
40
20
0
1000
−2
−4
−6
−8
−10
VGS - Gate to Source Voltage - V
SWITCHING CHARACTERISTICS
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
ID = −2.0 A
80
VGS = −2.5 V
60
−4.0 V
40
20
−50
10000
0
50
100
150
Tch - Channel Temperature -˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0V
1000
100
Ciss
Coss
Crss
10
−1
−10
VDS - Drain to Source Voltage - V
−100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
100
10
−0.1
tr
tf
td(off)
td(on)
VDD = −10 V
VGS(on) = −4.0 V
RG = 5 Ω
−1
−10
ID - Drain Current - A
10
1
0.1
0.4
0.6
0.8
1.0
1.2
VF(S-D) - Source to Drain Voltage - V
4
Data Sheet D11819EJ1V0DS00