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UC3845BD1G Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание
производитель
UC3845BD1G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
UC3845BD1G Datasheet PDF : 19 Pages
First Prev 11 12 13 14 15 16 17 18 19
UC3844B, UC3845B, UC2844B, UC2845B
VCC
Vin
5.0V Ref
+
-
7(12)
Isolation
Boundary
+
-
7(11)
T
S
Q
R
Comp/Latch
6(10)
5(8)
3(5)
R
VGS Waveforms
Q1
+
+
0
0
-
-
50% DC
25% DC
ǒ Ǔ V(Pin 1) - 1.4
Ipk =
3 RS
NS
Np
C
RS NS
NP
Figure 27. Isolated MOSFET Drive
8(14)
R
Bias
R
Osc
4(7)
+
1.0 mA 2R
2(3)
EA
R
1(1)
MCR
2N
101
3905
5(9)
2N
3903
The MCR101 SCR must be selected for a holding of < 0.5 mA @ TA(min). The
simple two transistor circuit can be used in place of the SCR as shown. All
resistors are 10 k.
Figure 28. Latched Shutdown
From VO
Ri
Rd Cf
2(3)
Rf
2.5V
+
1.0mA 2R
R
EA
1(1)
Rf 8.8k
5(9)
Error Amp compensation circuit for stabilizing any current mode topology except
for boost and flyback converters operating with continuous inductor current.
From VO
Rp Ri
Cp
Rd Cf
2.5V
2(3)
+
1.0mA 2R
Rf
EA
R
1(1)
5(9)
Error Amp compensation circuit for stabilizing current mode boost
and flyback topologies operating with continuous inductor current.
Figure 29. Error Amplifier Compensation
http://onsemi.com
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