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UC3842B(2013) Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
производитель
UC3842B
(Rev.:2013)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
UC3842B Datasheet PDF : 22 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
UC3842B, UC3843B, UC2842B, UC2843B
VCC
Vin
7(12)
5.0V Ref
+
-
S
Q
R
Comp/Latch
+
-
7(11)
Rg
Q1
6(10)
5(8)
3(5)
RS
Series gate resistor Rg will damp any high frequency parasitic oscillations
caused by the MOSFET input capacitance and any series wiring inductance in
the gate-source circuit.
Figure 29. MOSFET Parasitic Oscillations
IB
+
0
-
Vin
Base Charge
Removal
C1
Q1
6(10)
5(8)
3(5)
RS
The totem pole output can furnish negative base current for enhanced
transistor turn-off, with the addition of capacitor C1.
Figure 30. Bipolar Transistor Drive
5.0V Ref
+
-
S
Q
R
Comp/Latch
VCC
Vin
7(12)
Isolation
Boundary
+
-
7(11)
6(10)
5(8)
3(5)
C
VGS Waveforms
+
Q1
+
0
0
-
-
50% DC
25% DC
ǒ Ǔ Ipk
+
V(Pin1) *
3 RS
1.4
NS
Np
R
RS NS
NP
Figure 31. Isolated MOSFET Drive
8(14)
R
Bias
R
Osc
4(7)
+
1.0 mA 2R
2(3)
EA
R
1(1)
MCR
2N
101
3905
5(9)
2N
3903
The MCR101 SCR must be selected for a holding of < 0.5 mA @ TA(min). The simple two
transistor circuit can be used in place of the SCR as shown. All resistors are 10 k.
Figure 32. Latched Shutdown
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