U2532B Просмотр технического описания (PDF) - Temic Semiconductors

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U2532B

IR Transmitter and Receiver

Temic Semiconductors 

U2532B

Application Circuit

The diagram below shows the typical application for the

IC U2532B. The detector diode and IR emitter can also

be obtained from TEMIC. As emitter a high speed in-

frared emitting diode like TSHF5400 is recommended.

For improving output power two diodes can be connected

in series. An external current limiting resistor is used to

W adjust the appropriate forward current. The resulting cur-

rent of the emitter, with the settings RL = 5 and

VCC = 5 V, is Id = 300 mA and the corresponding typical

radiant intensity of a single diode is IE = 120 mW/sr.

The IR radiation detector BPV22NF is a high speed and

high sensitive PIN photodiode in a plastic package with

a spherical side view lens. Because of a large radiant sen-

sitive area of A = 7.5 mm2 a typical output current of

m l Ira = 85 A with Ee = 1 mW/cm2 and = 870 nm is

achieved. A transmitting distance of approximately 3.5 m

is possible. Rs and C are the low pass filter network to sup-

press power supply noise and other disturbances. At

pin RxD the output signal can be received. Optionally an

W external load resistor can be connected from pin 3 to VCC,

if a smaller pull up resistor than 20 k is desired.

1

16

TxD

2

15

RxD

3

14

mC

Reset 4

13

U2532B

5

12

SC

6

11

RS

100 W

C

470 nF

VCC

(5 V)

RL

TSHF 5 W

5400

7

10

8

9

BPV22NF

95 10212

Figure 8.

8 (10)

TELEFUNKEN Semiconductors

Preliminary Information

Rev. A1, 27-Sep-96

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