TZA3036 Просмотр технического описания (PDF) - Philips Electronics
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TZA3036 Datasheet PDF : 15 Pages
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Philips Semiconductors
12. Bare die information
TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
17
16
15
14
13
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1
Y
(0,0) X
2
3
4
5
6
7
8
9
10
Origin is center of die.
Fig 10. Bonding pad locations
001aac627
Table 5. Physical characteristics of the bare die
Parameter
Value
Glass passivation
0.3 µm PSG (PhosphoSilicate Glass) on top of 0.8 µm silicon nitride
Bonding pad
dimension
minimum dimension of exposed metallization is 90 µm × 90 µm
(pad size = 100 µm × 100 µm) except pads 2 and 3 which have exposed
metallization of 80 µm × 80 µm (pad size = 90 µm × 90 µm)
Metallization
2.8 µm AlCu
Thickness
380 µm nominal
Die dimension
820 µm × 1300 µm (± 20 µm2)
Backing
silicon; electrically connected to GND potential through substrate contacts
Attach temperature < 440 °C; recommended die attach is glue
Attach time
< 15 s
13. Package outline
Not applicable.
TZA3036_1
Product data sheet
Rev. 01 — 24 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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