TZA3013AU Просмотр технического описания (PDF) - Philips Electronics
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TZA3013AU Datasheet PDF : 16 Pages
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Philips Semiconductors
SDH/SONET STM16/OC48
transimpedance amplifier
Product specification
TZA3013A; TZA3013B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VCC
supply voltage
Vn
DC voltage
pads IN and INQ
pads OUT and OUTQ
pads OUTSENSE and OUTQSENSE
pad PILOT
pad DREF
In
DC current
pads IN and INQ
pads OUT and OUTQ
pad PILOT
pad DREF
Ptot
Tstg
Tj
Tamb
total power dissipation
storage temperature
junction temperature
ambient temperature
MIN.
−0.5
MAX.
+3.8
UNIT
V
−0.5
−0.5
−0.5
−0.5
−0.5
+2.0
V
VCC + 0.5 V
VCC + 0.5 V
VCC + 0.5 V
VCC + 0.5 V
−4.0
+4.0
mA
−10
+10
mA
−0.2
+0.2
mA
−4.0
+4.0
mA
−
300
mW
−65
+150
°C
−
150
°C
−40
+85
°C
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However it is good practice to take
normal precautions appropriate to handling MOS devices (see “Handling MOS devices”).
CHARACTERISTICS
Typical values at Tj = 25 °C and VCC = 3.3 V; minimum and maximum values are valid over the entire ambient
temperature range and supply range; all voltages are measured with respect to ground; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCC
supply voltage
ICC
supply current
AC-coupled; RL = 50 Ω;
without input signal
Ptot
Tj
Tamb
Rtr
total power dissipation
junction temperature
VCC = 3.3 V
ambient temperature
small-signal transresistance measured differentially;
of the receiver
AC-coupled
f−3dB(h)
In(tot)(rms)
high frequency −3 dB point
total integrated RMS noise
current over bandwidth
RL = ∞
RL = 50 Ω
Ci = 0.5 pF
referenced to input;
∆fi = 1.8 GHz third-order
Bessel filter; note 1
MIN.
3.0
−
TYP.
3.3
26
−
85.8
−40
−
−40
+25
3.6
7
1.8
3.5
1.7
1.9
−
425
MAX.
3.6
38
UNIT
V
mA
134
mW
+125
°C
+85
°C
10
kΩ
5.0
kΩ
−
GHz
−
nA
2001 Feb 26
8
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