TSM2N60S Просмотр технического описания (PDF) - TSC Corporation
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TSM2N60S Datasheet PDF : 8 Pages
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TSM2N60S
600V N-Channel Power MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol Min
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic b
VGS =0V, ID =250uA
VGS =10V, ID =0.6A
VDS =VGS, ID =250uA
VDS =600V, VGS =0V
VGS =±30V, VDS =0V
VDS =10V, ID =0.2A
IS =0.6A, VGS =0V
BVDSS
RDS(ON)
VGS(TH)
IDSS
IGSS
gfs
VSD
600
--
2
--
--
--
--
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching c
VDS =400V, ID =0.6A,
VGS = 10V
VDS =25V, VGS =0V,
f =1.0MHz
Qg
--
Qgs
--
Qgd
--
Ciss
--
Coss
--
Crss
--
Turn-On Delay Time
td(on)
--
Turn-On Rise Time
VGS =10V, ID =0.6A,
tr
--
Turn-Off Delay Time
VDD =300V, RG =18Ω
td(off)
--
Turn-Off Fall Time
tf
--
Notes:
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. For design reference only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Typ Max Unit
--
--
V
3.6
5
Ω
--
4
V
--
1
uA
--
±100
nA
0.8
--
S
0.85 1.15
V
13
--
2
--
nC
6
--
435
--
56
--
pF
9.2
--
12
--
21
--
nS
30
--
24
--
2/2
Version: A09
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