TSM1N60S Просмотр технического описания (PDF) - TSC Corporation
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TSM1N60S Datasheet PDF : 8 Pages
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TSM1N60S
600V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance - Junction to Ambient
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Lead
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RӨJA
RӨJC
RӨJL
Electrical Specifications (Ta=25oC, unless otherwise noted)
Parameter
Conditions
Symbol
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic b
VGS = 0V, ID = 250uA
VGS = 10V, ID = 0.3A
VDS = VGS, ID = 250uA
VDS = 600V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS ≧50V, ID = 0.3A
IS = 1A, VGS = 0V
BVDSS
RDS(ON)
VGS(TH)
IDSS
IGSS
gfs
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 400V, ID = 1A,
VGS = 10V
Qg
Qgs
Qgd
Input Capacitance
Output Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Ciss
Coss
Reverse Transfer Capacitance
Crss
Switching c
Turn-On Delay Time
td(on)
Turn-On Rise Time
VGS = 10V, ID = 1A,
tr
Turn-Off Delay Time
VDS = 300V, RG = 6Ω
td(off)
Turn-Off Fall Time
tf
Notes:
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. For design reference only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Limit
125
50
40
Min Typ
600
--
--
11
2.0
--
--
--
--
--
--
5
--
--
--
4.5
--
1.1
--
2
--
155
--
20
--
3
--
10
--
20
--
25
--
24
Unit
oC/W
oC/W
oC/W
Max Unit
--
V
13
Ω
4.0
V
10
uA
± 100
nA
--
S
1.5
V
6
--
nC
--
200
26
pF
4
30
50
nS
45
60
2/8
Version: C07
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