TS4962IQT(2007) Просмотр технического описания (PDF) - STMicroelectronics
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TS4962IQT Datasheet PDF : 46 Pages
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TS4962
Electrical characteristics
Table 8.
Electrical characteristics at VCC = +3.0V
with GND = 0V, Vicm = 1.5V, Tamb = 25°C (unless otherwise specified)(1)
Symbol
Parameter
ICC
ISTBY
Voo
Pout
Supply current
No input signal, no load
Standby current (2)
No input signal, VSTBY = GND
Output offset voltage
No input signal, RL = 8Ω
Output power, G=6dB
THD = 1% Max, f = 1kHz, RL = 4Ω
THD = 10% Max, f = 1kHz, RL = 4Ω
THD = 1% Max, f = 1kHz, RL = 8Ω
THD = 10% Max, f = 1kHz, RL = 8Ω
THD + N
Total harmonic distortion + noise
Pout = 300 mWRMS, G = 6dB, 20Hz < f < 20kHz
RL = 8Ω + 15µH, BW < 30kHz
Pout = 350mWRMS, G = 6dB, f = 1kHz
RL = 8Ω + 15µH, BW < 30kHz
Efficiency
Efficiency Pout = 0.7 WRMS, RL = 4Ω +≥ 15µH
Pout = 0.45 WRMS, RL = 8Ω+≥ 15µH
Power supply rejection ratio with inputs grounded (3)
PSRR
f = 217Hz, RL = 8Ω, G=6dB, Vripple = 200mVpp
Common mode rejection ratio
CMRR
f = 217Hz, RL = 8Ω, G = 6dB, ΔVic = 200mVpp
Gain Gain value (Rin in kΩ)
RSTBY
FPWM
SNR
tWU
tSTBY
Internal resistance from standby to GND
Pulse width modulator base frequency
Signal to noise ratio (A-weighting)
Pout = 0.4W, RL = 8Ω
Wake-up time
Standby time
Min. Typ. Max.
1.9 2.7
10 1000
3
25
0.7
1
0.5
0.6
2
0.1
78
88
60
54
-2---7---3----k---Ω---
Rin
3----0---0----k---Ω---
Rin
3----2---7----k---Ω---
Rin
273 300 327
200 280 360
82
5
10
5
10
Unit
mA
nA
mV
W
%
%
dB
dB
V/V
kΩ
kHz
dB
ms
ms
15/46
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